Nano-gripper and method of producing same

ABSTRACT

The nano-gripper of the present invention comprises (i) a pair of arms  71  and  71  disposed side by side, each arm  71  having a face at its front end, the front-end faces of the arms  71  and  71  facing each other, (ii) and a protrusion  72  with a tip formed on the front-end face of each arm, the tips of the protrusions  72  and  72  facing each other, the radius of curvature of each tip being 50 nanometers or less. Each protrusion  72  is a triangular-pyramidal silicon crystal with (001), (100), and (111) side faces.

This is a divisional of application Ser. No. 10/834,564 filed Apr. 28,2004, which is currently pending and is a continuation of PCT/JP01/10443filed Nov. 29, 2001.

TECHNICAL FIELD

This invention relates to a nano-gripper and its production process.With a pair of tweezers, objects of the order of magnitude ofmillimeters such as grains of rice and hairs can be caught and handled,but objects of the order of magnitude of nanometers such as DNA's,particles on a liquid-crystal panel, and particles on a very-large-scaleintegrated-circuit board cannot be handles because the tips of tweezersare not sharpened to the order of magnitude of nanometers. Thisinvention relates to (i) a nano-gripper with a pair of arms to catch andhandle nano-objects such as DNA's and (ii) the production process of thenano-gripper.

BACKGROUND ART

The minimum requirement of a nano-gripper is the tips of its arms suchthat their size is equal to or smaller than the size of objects to behandled. To handle nano-objects such as DNA's in particular with anano-gripper, the tips of its arms have to be as minute as 50 nanometersor less. Such a nano-gripper is made by attaching carbon nano-tubes tothe tips of probes for an interatomic-force microscope. Nano-grippersare also produced by electron-beam deposition and electric-fieldvapor-deposition methods. A known nano-gripper is twin probes withintegrated actuators, which are made of silicon nano-wire produced bythe electron-beam deposition or electric-field vapor-deposition method,or the anisotropy etching of silicon.

The nano-grippers currently in use and their production methods have theproblems below.

(i) Arms for current nano-grippers made of carbon nanotubes or siliconnanowire or produced by the electron-beam deposition or electric-fieldvapor-deposition method are pillar-like, or post-like, slim members.Such a member is flexible in proportion to the 3^(rd) power of itslength (it bends easily under force applied to its tip). If such amember has a circular cross section, it is flexible in inverseproportion to the 4^(th) power of its diameter. In other words, slimmembers such as nanowire have very small strength against bending force.DNA's and particles on VLSI boards are minute and have to be handled ina solution to prevent them from scattering or drying. While the tips ofarms of a current nano-gripper are dipped in such a solution, its probestructure is affected by the viscosity of the solution.

(ii) According to the electron-beam deposition or electric-fieldvapor-deposition method, arms in conformity with individualspecifications are produced one by one in a vacuum device; therefore,highly controllable arms can be produced, but their industrial massproduction is difficult. In addition, because a nano-gripper with anactuator of the order of magnitude of nanometers cannot be produced bythe electron-beam deposition method or the like, it is difficult tocontrol the gaps between the tips of arms of nano-grippers minutely.

(iii) The production of twin probes with integrated actuators requiresthe steps of making a special composite board unavailable on the marketand the extremely precise management of etching conditions; therefore,the production process of such twin proves with integrated actuators istoo complex. If the management of etching conditions is inadequate, massproduction with high repeatability and uniformity of such twin probeswith integrated actuators is impossible.

(iv) Although the tips of arms of a nano-gripper can be sharpened withhigh precision of the order of magnitude of nanometers withhigh-precision lithography, such lithography is costly.

In view of the above, an object of the present invention is to provide anano-gripper which has, on its arms' tips, protrusions with a radius ofcurvature of the order of magnitude of nanometers formed without usinghigh-precision lithography. Even when the nano-gripper is used to handleDNA's, etc. in a solution, its probe structure is not affected;therefore, the operator can control the gap between the protrusionseasily and precisely. The nano-gripper can be mass produced easily,inexpensively. Another object of the present invention is to provide theprocess of producing the nano-gripper.

DISCLOSURE OF INVENTION

According to the first feature of the present invention, there isprovided a nano-gripper comprising (i) a pair of arms disposed side byside, each arm having a face at its front end, the front-end faces ofthe arms facing each other and (ii) a protrusion with a tip formed onthe front-end face of each arm, the tips of the protrusions facing eachother, the radius of curvature of each tip being 50 nanometers or less.

According to the second feature of the present invention, there isprovided the nano-gripper of the first feature, wherein each of theprotrusions is a triangular-pyramidal silicon crystal with (001), (100),and (111) side faces.

According to the third feature of the present invention, there isprovided the nano-gripper of the first or second feature, which furthercomprises a pair of actuators, one of the actuators moving one of thearms and the other actuator moving the other arm to narrow and widen thegap between the tips of the protrusions.

According to the fourth feature of the present invention, there isprovided the nano-gripper of the third feature, wherein the actuatorsare of a type of thermal expansion.

According to the fifth feature of the present invention, there isprovided the nano-gripper of the fourth feature, wherein each of thethermal expansion-type actuators comprises a pair of expandable andcontractable silicon arms and each arm has an electrode for lettingelectricity flow through the arms.

According to the sixth feature of the present invention, there isprovided a process of producing a nano-gripper with a pair of armsdisposed side by side by using a base board including a insulating layerand a silicon layer with 001 facial orientation. The process comprisesthe steps of (i) forming a long, narrow mask in the 010 direction insuch a position on the top surface of the silicon layer as one of thearms is formed on one side of the mask and the other arm is formed onthe other side of the mask, (ii) forming resist patterns on the siliconlayer, the resist patterns corresponding in shape and position to thearms to be formed, (iii) etching the silicon layer to form agripper-in-work with the mask, (iv) removing the resist patterns fromthe gripper-in-work, (v) oxidizing the exposed surface of thegripper-in-work with heat to change the surface into a silicon-oxidefilm, (vi) removing the mask from the gripper-in-work to expose thesilicon zone below the mask, (vii) corroding the silicon zone of thegripper-in-process with aqueous solution of potassium hydroxide, and(viii) removing the silicon-oxide film from the gripper-in-process.

BRIEF DESCRIPTION OF DRAWINGS

The features and advantages of the present invention will become moreclearly appreciated from the following description in conjunction withthe accompanying drawings, in which:

FIG. 1 is a schematic perspective view of an embodiment of thenano-gripper of the present invention;

FIGS. 2 and 3 is a flowchart of the process of producing thenano-gripper of FIG. 1;

FIGS. 4 to 11 are illustrations of the steps of the process of FIGS. 2and 3;

FIG. 12(A) is a sectional view taken along the allowed line XIIA-XIIA ofFIG. 7;

FIG. 12(B), along the allowed line XIIB-XIIB;

FIG. 13 is an enlarged view of the part of the arms of the nano-gripperof FIG. 1;

FIG. 14 is illustrations of the formation of the protrusions of thenano-gripper of FIG. 1;

FIG. 15 is an illustration of another embodiment of the nano-gripper ofthe present invention; and

FIG. 16 is an illustration of still another embodiment of thenano-gripper of the present invention.

BEST MODE FOR CARRYING OUT THE INVENTION

Referring to the drawings, a preferred embodiment of the nano-gripper ofthe present invention will now be described.

In FIG. 1, the reference numeral “G” is the nano-gripper, whichcomprises a pair of right and left silicon probes 35 and 35 formed on apair of right and left insulator units 22 and 22, which are formed on abase 11. Each silicon probes 35 has an arm 71.

Each arm 71 has a face at its front end, and the front-end faces of thearms 71 and 71 face each other. A protrusion 72 is formed on eachfront-end face, the tips of the protrusions 72 and 72 on the front-endfaces facing each other. Each protrusion 72 is a silicon crystal in theshape of a triangular pyramid with (001), (100), and (111) side faces.Parts 75 and 76 of each silicon probe 35 constitute an actuator and areprovided with electrodes 75 e and 76 e, respectively. When electricitybetween the electrodes 75 e and 76 e of silicon probes 35 is turned onand off, the actuators expand and contract thermally; accordingly, thepaired arms 71 and 71 swing on hinges 73 and 73, widening and narrowingthe gap between the tips of protrusions 72 and 72. Thus, thenano-gripper G catches and releases an object. Besides, as the radii ofcurvature of the tips of the protrusions 72 and 72 are 50 nm or less,the nano-gripper can handle nano-objects such as DNA's, catching andreleasing them.

Now, the process of producing the nano-gripper will be described below.

As shown in FIGS. 2 and 4(I), the main material is a silicon board 10comprising a base layer 1, an insulating layer 2, and a silicon layer 3with [001] facial orientation. Preferably the silicon board 10 is an SOI(silicon on insulator) board comprising a pair of upper and lowersilicon layers and a silicon-oxide layer formed between the upper andlower silicon layers.

The silicon board 10 may be a board comprising a base plate of glass anda single-crystal silicon layer formed on the base plate, or a boardcomprising a base plate of an amorphous material or polysilicon and anSOI layer formed on the base plate. If the silicon board 10 is a boardcomprising a top silicon layer with [001] facial orientation and aninsulating layer under the top layer, the silicon board 10 may be ofthree- or four-layer structure.

The base layer 1 is a silicon (100), (111), or (110) base plate or madeof silicon such as polysilicon, and is about 500 μm thick.

The base layer 1 may be of polysilicon or glass and preferably has athickness of 100-1,000 μm.

The insulating layer 2 is of silicon oxide and about 2 μm thick.

Preferably the insulating layer 2 has a thickness of 0.1-5.0 μm.

The silicon layer 3 is of silicon and about 30 μm thick. The surface ofthe silicon layer 3 has [001] facial orientation. Accordingly, when azone on the silicon layer 3 is corroded away by etching with aqueoussolution of potassium hydroxide and sinks to leave a recess, the bottomof the recess has [001] facial orientation and the side walls of therecess have [010] facial orientation. The details of this etching willbe described later.

The first step of the process of producing the nano-gripper is to form amask film 4 of silicon nitride in the [100] or [010] direction of on thetop surface of the silicon layer 3 of the silicon board 10 by vacuum orplasma CVD (chemical vapor deposition), or sputtering (Step 11). Themask film 4 is amorphous and has no crystal orientation.

Next, as shown in FIG. 4(II), a resist film 5 for photolithography isformed on the mask film 4 by a spin coater or the like (Step 12). Then,a linear mask (not shown) with a width of, for example, 70 μm is formedby photolithography and put on the resist film 5. The resist film 5 andthe linear mask are exposed to light and developed to produce a linearstrip of resist 51, which has the same width “W” as the linear mask.

The width “W” of the linear strip of resist 51 is one of the importantparameters governing the gap, or distance, “d” between the tips ofprotrusions 72 and 72 of the nano-gripper “G” The width “W” isrepresented by the following equation.W=2t+dwhere t is the thickness of the silicon layer 3. If d and t are 10 μmand 30 μm, respectively, W is 70 μm.

Next, the mask film 4 and the linear strip of resist 51 are exposed tolight by an exposure device (Step 13). Then, as shown in FIG. 5(IV), themask film 4 undergoes etching by an etching device (an RIE device) (Step14). Then, a mask-removing liquid is jetted to the mask film 4 to removeit except the part of it under the linear strip of resist 51. Thus, alinear mask 41 is formed under the linear strip of resist 51. The mask41 has the same width as the above-mentioned linear mask and the linearstrip of resist 51. Next, a resist-removing liquid is jetted to thelinear strip of resist 51 to remove it and expose the mask 41 (Step 15).

Next, as shown in FIG. 6(V), a resist film 6 as thick as the mask 41 isformed, around the mask 41, on the silicon layer 3 by a spin coater(Step 16).

Next, a mask for photolithography is put on the resist film 6. The shapeof the mask is the same as the shape of the nano-gripper with the mask41 between the silicon probes 35. The mask for photolithography is puton the resist film 6 and the mask 41 so that the zone of the mask forphotolithography corresponding the mask 41 will overlap the mask 41. Themask for photolithography is made by drawing the outline of the maskwith a CAD program and drawing the outline on a mask sheet by amask-producing device. Then, the resist film 6 and the mask forphotolithography put on the resist film 6 and the mask 41 are exposed toultraviolet rays by a photolithography device to produce patterns ofresist 61 and 61 on both sides of the mask 41.

Thus, formed on the silicon layer 3 are right and left patterns ofresist 61 and 61, which are symmetrical with respect to the longitudinalcenter line of the mask 41 and have almost the same shapes as the rightand left silicon probes 35 and 35 of the nano-gripper “G”, respectively.

Next, the silicon layer 3, the right and left patterns of resist 61 and61, and the mask 41 are exposed to light by an exposure device (Step17). Thus, the silicon layer 3 is removed except such part of it as iscovered by the mask 41 and the patterns of resist 61 and 61. The part ofthe silicon layer 3 left over is a gripper-in-work 31. The patterns ofresist 61 and 61 undergo ICP-RIE (inductively coupled plasma reactiveion etching) (Step 18). Then, the patterns of resist 61 and 61 areremoved by a resist-removing liquid. Thus, a gripper-in-work 31 with themask 41 is exposed as shown in FIG. 7(VII) (Step 19)

Next, as shown in FIG. 7(VIII), the gripper-in-work 31 undergoes thermaloxidation in an oxidizing furnace. Accordingly, the exposed surface ofthe gripper-in-work 31 is oxidized and thus becomes a silicon-oxide film32, whereas the covered surface of the gripper-in-work 31 under the mask41 is not oxidized to become a linear silicon zone 33 (Step 20). Thesilicon zone 33 has the same width as the mask 41.

Next, when the mask 41 is removed by an etching device (Step 21), thesilicon zone 33 is exposed, as shown in FIG. 8(IX). Thus, thegripper-in-work 31 except the silicon zone 33 is covered with thesilicon-oxide film 32. The reference symbol 31A is the arm part. Thesilicon zone 33 runs in the center of the arm part 31A, and the rightand lest sides of the silicon zone 33 in the arm part 31A are coveredwith the silicon-oxide film 32.

Next, the silicon zone 33 undergoes etching by aqueous solution ofpotassium hydroxide of 30 weight percent; accordingly, the silicon inthe silicon zone 33 is gradually corroded and the silicon zone 33 sinks.

Thus, a ditch-like etching hole 9 is formed in the arm part 31A, itsbottom defined by the silicon zone 33 being corroded and sinking, itsfront end defined by the silicon-oxide film 32, its both sides definedby silicon walls. More specifically, the etching hole 9 is defined by a(001) silicon face at its bottom, a (100) silicon-oxide face at itsfront end, two (010) silicon faces at its sides. Because the etching ismade by aqueous solution of potassium hydroxide, a (100) silicon face iscorroded more rapidly than a (111) silicon face. Accordingly, as theetching progresses, a silicon crystal is deposited in each of the rightand left front-end corners of the etching hole 9 as shown in FIG. 14.The two silicon crystals become the protrusions 72. Because each siliconcrystal is deposited on the basis of the (001) face, the (100) face, andone of the two (010) faces, a (111) silicon face is formed and exposed.Accordingly, each protrusion 72 is a triangular pyramid with (001),(100), and (111) side faces. Thus, two protrusions 72 and 72 are formedbetween the arms 71 and 71, symmetrically with respect to thelongitudinal center line between the arms 71 and 71, as shown in FIGS.8(X) and 13. Because the silicon-oxide film 32 has [100] facialorientation at the front end of the etching hole 9, each protrusion 72is deposited at the angle of 54.7° to the silicon-oxide film 32 at thefront end of the etching hole 9.

As described above, the protrusions 72 and 72 are formed at the tips ofthe arms 71 and 71. In addition, because the protrusions 72 and 72 areformed along the (100) face of the silicon-oxide film 32 at the frontend of etching hole 9, the tips of protrusions 72 and 72 face each otherdirectly.

The flowchart of FIG. 2 is continued to that of FIG. 3. As shown inFIGS. 3 and FIG. 9(XII), an aluminum film 8 is formed on the bottomsurface of the base layer 1 by a vacuum evaporator or a sputteringdevice, and a resist film 90 is formed on the back of the aluminum film8 by a spin coater (Step 31).

A mask (not shown) of the same shape as the base 11 of the nano-gripperis put on the resist film 90. Then, the resist is developed to removethe resist and aluminum films 90 and 8 except the parts of them underthe mask. Thus, left under the mask are a resist film 91 and an aluminumfilm 81 as shown in FIG. 10(XIII).

As shown in FIG. 10(XIII), the resist film 91 and the base layer 1 areexposed to light by an exposure device (Step 32). Then, the aluminumfilm 81 undergoes etching with phosphoric acid by using aphosphoric-acid etching bath to remove the resist film 91 (Step 33).

As shown in FIG. 10(XIV), the base layer 1 and the aluminum film 81undergo etching by an ICP-RIE device to remove the base layer 1 exceptthe part of it covered by the aluminum film 81, the part becoming thebase 11 (Step 34).

Lastly, the gripper-in-work 31 undergoes etching with hydrogen fluoridein a BHF etching bath for removal of the silicon-oxide film 32.

Through the above process, the nano-gripper “G” of the present inventionis produced.

Now the working and effect of the nano-gripper of the present inventionwill be described below.

According to the process of producing the nano-gripper of the presentinvention, the surface of the gripper-in-work 31 is oxidized to become asilicon-oxide film 32, except the part (silicon zone 33) of the surfacecover by the mask 41, in the step of thermal oxidization. Then, the mask41 is removed to expose the silicon zone 33 in the step of mask removal,and the silicon zone 33 is corroded with aqueous solution of potassiumhydroxide and sinks in the step of silicon etching. Accordingly, theetching hole 9 is formed, its bottom defined by the silicon zone 33being corroded and sinking, its front end defined by the silicon-oxidefilm 32, its both sides defined by silicon walls. As the etchingprogresses, a protrusion 72 is formed on the basis of the (001), (100),and (010) faces in each of the right and left front-end corners of theetching hole 9. Each protrusion 72 is a triangular pyramid with (001),(100), and (111) side faces. Because one protrusion 72 is formed in theright front-end corner of the etching hole 9 and the other protrusion 72is formed in the left front-end corner, they are formed on the front-endopposite faces of the arms 71 and 71, their tips facing each otherdirectly. Then, the silicon-oxide film 32 is removed in the step ofremoval of the silicon-oxide film, and the part of the insulating layer2 under the arms 71 and 71 is removed in the step of removal of theinsulating layer. Thus, the shapes of the paired protrusions 72 and 72are determined by crystal faces, and they, facing each other, are formedon the straight line of one crystal orientation; therefore, the tips ofprotrusions 72 and 72 are given a radius of curvature of 50 nm or lesswithout using high-precision lithography.

Accordingly, the nano-gripper “G” is suitable for handling very minutenano-objects such as DNA's and cells. Because the tips of protrusions 72are as minute as objects to be handled, the electric properties ofcarbon nanotubes, nanocrystals, and so on can be measured.

Now, the nano-gripper “G” produced through the above process will bedescribed in detail.

As shown in FIG. 1, a pair of right and left silicon probes 35 and 35 isformed on a pair of right and left insulator units 22 and 22, which isformed on a base 11. The width, length, and height of the base 11 areabout 5 mm, 10 mm, and 0.5 mm, respectively. These dimensions are mereexamples and may be set to any values depending on various uses.

Each insulator unit 22 comprises 2 μm thick silicon-oxide layer strips21A, 21B, and 21C. As each strip is made of silicon oxide alone, itfunctions as an insulator.

Next, silicon probes 35 will be described below.

The paired right and left silicon probes 35 are symmetrical with respectto the center line therebetween. As the silicon probes 35 are made ofsilicon, they are conductive. When electricity flows through them, theyexpand with heat. Each silicon probe 35 comprises an arm 71, aprotrusion 72, a hinge 73, and an actuator including parts 75 and 76,all formed as one body.

The width and length of each arm 71 are about 250 μm and 1,250 μm,respectively. Protrusions 72 and 72 are formed on the front-end oppositefaces of the arms 71 and 71. The insulator units 22 and 22 do not extendunder the arms 71 and 71; accordingly, the arms 71 and 71 can easily beswung.

Each protrusion 72 is in the shape of triangular pyramid with (001),(100), and (111) side faces, and its tip is sharp. The tips of theprotrusions 72 and 72 face each other and the gap therebetween is about10 μm.

Each arm 71 is supported on a hinge 73, which is supported on a support74; accordingly, when each arm 71 is pushed and pulled, it swings.

A pair of L-shaped parts 75 and 76 extends from the outside of each arm71. The parts 75 and 76 of each arm 71 constitute an actuator and areprovided with electrodes 75 e and 76 e, respectively.

The support 74 and the parts 75 and 76 of each silicon probe 35 areformed on the silicon-oxide layer strips 21A, 21B, and 21C,respectively, of the insulator unit 22 of said silicon probe 35.

When a power supply connected to the electrodes 75 e and 76 e of theactuators is turned on, the actuators expand with Joule heat and pushthe arms 71, which swing on the hinges 73.

With the above configuration, when the power supply is turned on, thegap between the tips of the protrusions 72 and 72 is narrowed. Thus, thenano-gripper “G” can handle nano-objects such as DNA's, catching andreleasing them.

In the above embodiment of the nano-gripper, although each arm has anactuator on one side alone to push it in one direction alone, it mayhave another actuator on the other side so that it can be pushed in twodirections. Such actuators may be of an electrostatic type or apiezoelectric type.

Another embodiment of the nano-gripper of the present invention is shownin FIG. 15. The nano-gripper is provided with piezoelectric actuators.The minute movement of the piezoelectric actuator can be controlled byvoltage and it is free from drift; accordingly, it is suitable forminute positioning.

Yet another embodiment of the nano-gripper of the present invention isshown in FIG. 16. The nano-gripper is provided with electrostaticactuators, which make use of electrostatic force. A probe and anelectrostatic actuator can easily be formed as one body and thedisplacement of the arm of the probe can be measured by measuring thecapacitance of the actuator. Thus, the electrostatic actuator ispreferable.

INDUSTRIAL APPLICABILITY

According to the first feature of the invention, because the tips of theprotrusions of the paired arms of the nano-gripper face each other andtheir radii of curvature are 50 nm or less, the nano-gripper can handlenano-objects such as DNA's, catching and releasing them.

According to the second feature of the invention, because theprotrusions on the paired arms of the nano-gripper are hard siliconcrystals, its probe structure is not affected even when the tips of thearms are dipped in a solution. Besides, the tip of the protrusion ofeach arm is the apex of a silicon crystal with (001), (100), and (111)side faces, its radius of curvature is as minute as 50 nm or less;therefore, the nano-gripper can handle DNA's in a solution, catching andreleasing them.

According to the third feature of the invention, the gap between thetips of the protrusions of the paired arms of the nano-gripper isnarrowed and widened by extending and contracting the actuator of thenano-gripper. Thus, the nano-gripper can handle nano-objects, catchingand releasing them.

According to the fourth feature of the invention, because the expansionand contraction of the thermal-expansion actuators of the nano-grippercan be adjusted by changing the heating values of the actuators, thepinching force of the nano-gripper can easily be adjusted.

According to the fifth feature of the invention, because thenano-gripper including its actuators can be formed as a single piece outof a single silicon board 10, the nano-gripper can be mass-producedeasily and inexpensively. Besides, because the expansion and contractionof the pairs of silicon arms of the actuators can be adjusted bychanging the currents flowing through the pairs of silicon arms, thepinching force of the nano-gripper can easily be adjusted and the gapbetween the tips of the paired protrusions can precisely be controlled.

According to the sixth feature of the invention, the surface of thegripper-in-work is oxidized to become a silicon-oxide film, except thezone of the surface cover by the mask, in the step of thermaloxidization. Then, the mask is removed to expose the silicon zone in thestep of mask removal, and the silicon zone is corroded with aqueoussolution of potassium hydroxide and sinks in the step of siliconetching. Accordingly, an etching hole is formed, its bottom defined bythe silicon zone being corroded and sinking, its front end defined bythe silicon-oxide film, its both sides defined by silicon walls. Morespecifically, the etching hole is defined by a (001) silicon face at itsbottom, a (100) silicon-oxide face at its front end, two (010) siliconfaces at its sides. As the etching progresses, a protrusion is formed onthe basis of the (001), (100), and (010) faces in each of the right andleft front-end corners of the etching hole. Each protrusion 72 is atriangular pyramid with (001), (100), and (111) side faces. Because oneprotrusion 72 is formed in the right front-end corner of the etchinghole 9 and the other protrusion 72 is formed at the left front-endcorner, they are formed on the front-end opposite faces of the arms,their tips facing each other directly. Then, the silicon-oxide film ofthe gripper-in-work is removed in the step of removal of thesilicon-oxide film, and the part of the insulating layer under the armsof the gripper-in-work is removed in the step of removal of theinsulating layer to finish the nano-gripper. Thus, the shapes of thepaired protrusions are determined by crystal faces, and they, facingeach other, are formed on the straight line of one crystal orientation;therefore, the tips of protrusions are given a radius of curvature of 50nm or less without using high-precision lithography.

1. A nano-gripper comprising; a pair of arms disposed side by side, eacharm having a base portion, the base portions of the arms being fixed toa base, each arm having a face at its front end, the front-end faces ofthe arms facing each other; and a protrusion with a tip formed on thefront-end face of each arm, the tips of the protrusions facing eachother, the pair of protrusions being formed by etching a silicon crystaldisposed between the front-end faces, the silicon crystal having asilicon-oxide film parallel to a (100) face of the silicon crystal andperpendicular to the front-end faces.
 2. A process of producing anano-gripper with a pair of arms disposed side by side by using a baseboard including an insulating layer and a silicon layer with (001)facial orientation, the process comprising the steps of: forming a long,narrow mask in the (010) direction in such a position on the top surfaceof the silicon layer as one of the arms is formed on one side of themask and the other arm is formed on the other side of the mask; formingresist patterns on the silicon layer, the resist patterns correspondingin shape and position to the arms to be formed; etching the siliconlayer to form a gripper-in-work with the mask; removing the resistpatterns from the gripper-in-work; oxidizing the exposed surface of thegripper-in-work with heat to change the surface into a silicon-oxidefilm; removing the mask from the gripper-in-work to expose the siliconzone below the mask; corroding the silicon zone of thegripper-in-process with aqueous solution of potassium hydroxide; andremoving the silicon-oxide film from the gripper-in-process.
 3. Aprocess of producing a nano-gripper, said process comprising the stepsof: providing a pair of arms disposed side by side, each arm having abase portion, the base portions of the arms being fixed to a base, eacharm having a face at its front end, the front-end faces of the armsfacing each other; providing a protrusion with a tip formed on thefront-end face of each arm, the tips of the protrusions facing eachother, being formed by etching a silicon crystal disposed between thefront-end faces, the silicon crystal having a silicon-oxide filmparallel to a (100) face of the silicon crystal and perpendicular to thefront-end faces; wherein each of the paired protrusions in atriangular-pyramidal silicon crystal with (001), (100) and (111) sidefaces.
 4. A process of producing a nano-gripper; said process comprisingthe steps of: providing a pair of arms disposed side by side, each armhaving a base portion, the base portions of the arms being fixed to abase, each arm having a face at its front end, the front-end faces ofthe arms facing each other providing a protrusion with a tip formed onthe front-end face of each arm, the tips of the protrusions facing eachother, being formed by etching a silicon crystal disposed between thefront-end faces, the silicon crystal having a silicon-oxide filmparallel to a (100) face of the silicon crystal and perpendicular to thefront-end faces; and providing a pair of actuators, one of the actuatorsmoving one of the arms and the other actuator moving the other arm tonarrow and widen the gap between the tips of the protrusions.